Defects--recognition, imaging and physics in semiconductors 1999
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Defects--recognition, imaging and physics in semiconductors 1999 proceedings of the eighth International Conference on Defects--Recognition, Imaging and Physics in Semiconductors, Narita, Japan, September 15-18, 1999 by International Conference on Defects--Recognition, Imaging and Physics in Semiconductors (8th 1999 Narita-shi, Japan)

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Published by Elsevier in Amsterdam, the Netherlands .
Written in English

Subjects:

  • Semiconductors -- Defects -- Congresses.,
  • Image processing -- Congresses.

Book details:

Edition Notes

Includes bibliographical references.

Other titlesRecognition, imaging and physics in semiconductors., Proceedings of the eighth International Conference on Defects--Recognition, Imaging and Physics in Semiconductors.
Statementedited by T. Ogawa, M. Tajima.
GenreCongresses.
SeriesJournal of crystal growth -- v. 210, no. 1-3.
ContributionsOgawa, Tomoya, 1930-, Tajima, M.
The Physical Object
Paginationxii, 420 p. :
Number of Pages420
ID Numbers
Open LibraryOL18205725M

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Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP IX) by P. J. Wellmann, Rimini, Italy on Sep , view at publisher manuscript Determination of Charge Carrier Concentration in n- and p-Doped SiC Based on Optical Absorption Measurements. "Defect Characterization, Imaging, and Control in Wide Band Gap Semiconductors and Devices," presented at the 17th Conference on Defects – Recognition, Imaging and Physics in Semiconductors (DRIP) Conference, Valladolid, Spain, October , Talk at 9th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors Rimimi 9/ (Agglomeration of point defects at dislocations in compound semiconductors) Talk at Université de Poitiers 5/ (Point defects and dislocations in semiconductors studied by positron annihilation). Gaspar P, Hubbard C, McPhail DS, Cummings A et al., , A topographical assessment and comparison of conservation cleaning treatments, Journal of Cultural Heritage, Vol: 4, Pages: , ISSN: Cite.

Principles of Physics and Meteorology. Muller, Johann Heinrich Jacob () Philadelphia: Lea & Blanchard, First Edition. Large Octavo. xii, [25] pages, index, [36]pp. publisher's ads at rear. Illustrated in black and white with 2 hand colored plates. This work introduced American students to the details of physics and. – 9th International Conference on Defects – Recognition, Imaging and Physics in Semiconductors, Rimini (Italy) September. – 15th International Vacuum Congress, San Franzisco (USA) 29 October – 2 November. – Italian-Swedish Workshop in Spectroscopy with Synchrotron Radiation, Stockholm (Sweden), December.   Defects-recognition, imaging and physics have been the focus of materials research for a long time due to its enormously important role in the physical properties of materials [1, 2].In particular, III-nitrides based heteroepitaxially grown layers generally contain a high number of extended structural defects such as threading dislocations and stacking faults (SFs) which can have detrimental Cited by: 2. Book Chapters. A. Karoui, 6th International Conference on Advanced Thermal Processing of Semiconductors, Ed. T. Hori RTP '98, Kyoto, Japan, 10th International Conference on Defects: Recognition, Imaging and Physics of Semiconductors in Batz-sur-Mer, France, Sep

Kohei Yamasue and Yasuo Cho: “Improvement of Signal-to-Noise Ratio in Carrier Distribution Imaging in Intermittent Contact Scanning Nonlinear Dielectric Microscopy Based on Boxcar Integration”, 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVIII),ABSTRACTS, (September , Berlin, Germany). Terahertz pulsed imaging is a spectroscopic imaging modality using pulses of electromagnetic radiation ( GHz–10 THz), and there has been recent interest in studying biomedical specimens. In: 9th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP IX), RIMINI, ITALY, SEP , Published in: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91 (Sp. Iss. SI). pp. . Notes Summary: ABSTRACT: The goal of this research is to develop a post-implantation annealing process in silicon carbide (SiC). Due to the low diffusivities of dopants in SiC, even at temperatures in excess of Ê»C, diffusion is not a suitable process to achieve selective, planar doping.